Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs
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| Creator |
Kondryuk, D.V.
Derevyanchuk, A.V. Kramar, V.M. Kudryavtsev, A.A. |
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| Description |
Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs. The heterojunction has been considered as unstrained, the nanosystem is modeled as a rectangular quantum well of a finite depth. Interaction of exciton with optical polarization phonons has been taken into account. Calculated has been the temperature dependence of the energy corresponding to transition into the background excitonic state, and determined have been temperature changes in the absorption coefficient related with this transition. It has been shown that observation of these temperature changes in the energy and absorption coefficient, caused by interaction with optical phonons, is possible in the case of exciton with heavy hole at temperatures above 100 K.
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| Date |
2017-06-12T17:54:01Z
2017-06-12T17:54:01Z 2015 |
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| Type |
Article
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| Identifier |
Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs / D.V. Kondryuk, A.V. Derevyanchuk, V.M. Kramar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 128-133. — Бібліогр.: 33 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.02.128 PACS 73.21.Fg http://dspace.nbuv.gov.ua/handle/123456789/120721 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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