About self-activated orange emission in ZnO
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
About self-activated orange emission in ZnO
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| Creator |
Markevich, I.V.
Stara, T.R. Bondarenko, V.O. |
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| Description |
Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.
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| Date |
2017-06-12T18:00:45Z
2017-06-12T18:00:45Z 2015 |
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| Type |
Article
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| Identifier |
About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 134-137. — Бібліогр.: 17 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.02.134 PACS 81.05.Dz, 81.05.Je http://dspace.nbuv.gov.ua/handle/123456789/120723 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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