Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
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| Creator |
Slipokurov, V.S.
Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
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| Description |
Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution
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| Date |
2017-06-12T18:12:03Z
2017-06-12T18:12:03Z 2015 |
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| Type |
Article
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| Identifier |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.02.144 PACS 73.40.Cg http://dspace.nbuv.gov.ua/handle/123456789/120731 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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