The effect of oxygen-containing anions on luminescent properties of CsI
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The effect of oxygen-containing anions on luminescent properties of CsI
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| Creator |
Shpilinskaya, L.N.
Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
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| Description |
It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed.
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| Date |
2017-06-13T14:51:12Z
2017-06-13T14:51:12Z 2000 |
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| Type |
Article
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| Identifier |
The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 78.55.Fv, - m, 78.60.- b, Ya http://dspace.nbuv.gov.ua/handle/123456789/121092 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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