Specificity of high-pure monocrystalline silicon production for various registering and converting devices
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices
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| Creator |
Trubitsyn, Yu.V.
Zverev, S.V. |
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| Description |
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
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| Date |
2017-06-13T14:28:20Z
2017-06-13T14:28:20Z 2000 |
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| Type |
Article
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| Identifier |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C http://dspace.nbuv.gov.ua/handle/123456789/121082 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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