Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions
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| Creator |
Zorenko, Yu.
Limarenko, L. Konstankevych, I. Pashkovsky, M. Moroz, Z. Solsky, I. Grinev, B. Nekrasov, V. Borodenko, Yu. |
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| Description |
Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semiconductor radiation detectors. It is established that the long-wave shift of the CdWO₄:Bi emission spectra and increase of the light yield in the sensitivity region of Si-PD up to 15-20% in comparison with this parameter for the CdWO₄, occuring at optimal level of the activator concentration 0.025–0.25 mass% Bi₂O₃ in the melt and contens of Li⁺ or Ag⁺ ions as compensators for providing the ratio of mentioned impurities not less than 1:(1.5÷3), is connected with emission of the (BiO₆⁹⁻) complexes with lmax = 560 nm and t = 0.8-4.2 µs at 300 K. The shift of the emission spectra of the Bi₄Ge₃O₁₂:Pb crystals into the red spectral region is caused by emission of the (PbO₆¹⁰⁻) complexes in the bands with lmax = 570 and 690 nm and t = 1.0 ms. In addition, the light yield of the Bi₄Ge₃O₁₂:Pb single crystals at impurity concentrations of 0.005–0.5 mass% PbO in the melt was not less than 1.0–0.8 in comparison with that of undoped analogs.
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| Date |
2017-06-13T15:06:07Z
2017-06-13T15:06:07Z 2000 |
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| Type |
Article
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| Identifier |
Название / Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky, B. Grinev, V. Nekrasov, Yu. Borodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 207-212. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 78.60.Ya, 78.70.- q http://dspace.nbuv.gov.ua/handle/123456789/121110 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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