Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors
|
|
| Creator |
Ignatovych, M.
Kelemen, A. Otvas, N. Peto, A. Ogenko, V. |
|
| Description |
Time-resolved radioluminescence (RL) of X-ray phosphors: BaFCl:Eu, ZnS.CdS:Ag and Y₂О₃:Еu, which exhibited ultraviolet (lmax = 390 nm), yellow-green, (lmax = 530 nm) and red (lmax=620 nm) luminescence respectively, have been measured. For tested phosphors a good proportionality between the light output of the radioluminescence and the dose rate in the region of dose rates from 3 to 45 MGy/s has been obtained. It was also revealed that the emitting properties of all phosphors are preserved after high-dose (10⁴ Gy) and high temperature (500°C) annealing the samples. Thermoluminescent (TL) characterization of Sr₃(PO₄)₂:Eu and BaFCl:Eu under X-ray, beta and gamma irradiation have been performed. Linear TL dose dependence under irradiation dose in the mGy - Gy region was revealed, which makes these phosphors suitable also for luminescence dosimetry in the low doses region. Thus, the main characteristics of phosphors: i) the high conversion efficiency, ii) the good dose-rate proportionality, iii) the radiation stability allow to consider these materials as promising for high-energy and high dose rate dosimetry.
|
|
| Date |
2017-06-13T14:54:26Z
2017-06-13T14:54:26Z 2000 |
|
| Type |
Article
|
|
| Identifier |
Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors / M. Ignatovych, A. Kelemen, N. Otvas, A. Peto, V. Ogenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 240-243. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 78.60.- b, Kn, Ya http://dspace.nbuv.gov.ua/handle/123456789/121094 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|