Radiation-stimulated processes in silicon structures with contacts based on TiN
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radiation-stimulated processes in silicon structures with contacts based on TiN
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| Creator |
Nasyrov, M.U.
Ataubaeva, A.B. |
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| Description |
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains.
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| Date |
2017-06-13T15:47:06Z
2017-06-13T15:47:06Z 2015 |
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| Type |
Article
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| Identifier |
Radiation-stimulated processes in silicon structures with contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 220-225. — Бібліогр.: 25 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.02.220 PACS 61.80.-x http://dspace.nbuv.gov.ua/handle/123456789/121149 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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