Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x
|
|
| Creator |
Sapaev, B.
Saidov, A.S. Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Dmitruk, I.N. Galak, N.P. Sapaev, I.B. |
|
| Description |
Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x(ZnS)x consist of a wide band with the peak within the range of 505 to 520 nm. The Raman scattering shows that approximately 19 % of silicon located directly under the epitaxial film is in amorphous phase.
|
|
| Date |
2017-06-13T11:19:24Z
2017-06-13T11:19:24Z 2005 |
|
| Type |
Article
|
|
| Identifier |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x / B. Sapaev, A.S. Saidov, I.B. Sapaev, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 16-18. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS:78.70.Fy, 78.70.Gg http://dspace.nbuv.gov.ua/handle/123456789/120965 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|