Influence of low-temperature annealing on the state of CdTe surface
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of low-temperature annealing on the state of CdTe surface
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| Creator |
Parfenyuk, O.A.
Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. |
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| Description |
Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.
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| Date |
2017-06-13T11:11:40Z
2017-06-13T11:11:40Z 2005 |
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| Type |
Article
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| Identifier |
Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS: 72.80.Ey, 78.55.Et, 81.40.Rs, 81.40T http://dspace.nbuv.gov.ua/handle/123456789/120961 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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