Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
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| Creator |
Koval'chuk, A.V.
Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. |
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| Description |
Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness.
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| Date |
2017-06-13T11:43:44Z
2017-06-13T11:43:44Z 2005 |
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| Type |
Article
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| Identifier |
Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS: 72.80 Rj, 73.61.Wp http://dspace.nbuv.gov.ua/handle/123456789/120976 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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