Diffusion model of defect formation in silicon under light ion implantation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Diffusion model of defect formation in silicon under light ion implantation
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| Creator |
Voznyy, M.V.
Gorley, P.M. Schenderovskyy, V.A. |
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| Description |
In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy.
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| Date |
2017-06-13T15:31:16Z
2017-06-13T15:31:16Z 2000 |
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| Type |
Article
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| Identifier |
Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 61.78.T, 66.30 http://dspace.nbuv.gov.ua/handle/123456789/121130 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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