Comprehensive investigation of defects in highly perfect silicon single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Comprehensive investigation of defects in highly perfect silicon single crystals
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| Creator |
Prokopenko, I.V.
Kislovskii, E.N. Olikhovskii, S.I. Tkach, V.M. Lytvyn, P.M. Vladimirova, T.P. |
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| Description |
We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon single crystals annealed at 750 °С.
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| Date |
2017-06-13T16:25:38Z
2017-06-13T16:25:38Z 2000 |
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| Type |
Article
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| Identifier |
Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ.
1560-8034 PACS 61.10.Eq; 61.71.Ff, 61.72.Ji, 61.72.Nn, 61.72.Qq http://dspace.nbuv.gov.ua/handle/123456789/121174 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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