Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys
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| Creator |
Olikh, Y.M.
Savkina, R.K. Vlasenko, O.I. |
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| Description |
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K. |
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| Date |
2017-06-13T15:33:15Z
2017-06-13T15:33:15Z 2000 |
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| Type |
Article
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| Identifier |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 61.72.V, 42.70.K, 71.28, 61.72.H http://dspace.nbuv.gov.ua/handle/123456789/121132 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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