Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
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| Creator |
Kladko, V.P.
Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
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| Description |
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.
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| Date |
2017-06-13T16:16:49Z
2017-06-13T16:16:49Z 2000 |
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| Type |
Article
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| Identifier |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS: 61.10.E, N; 61.72.D; 68.55.L http://dspace.nbuv.gov.ua/handle/123456789/121168 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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