Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
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| Creator |
Boltovets, N.S.
Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. |
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| Description |
We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.
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| Date |
2017-06-13T16:15:22Z
2017-06-13T16:15:22Z 2000 |
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| Type |
Article
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| Identifier |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 07.07.D, 81.05.J, 85.30.K http://dspace.nbuv.gov.ua/handle/123456789/121166 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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