Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing
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| Creator |
Agueev, O.A.
Svetlichny, A.M. Soloviev, S.I. |
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| Description |
For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC.
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| Date |
2017-06-13T16:22:59Z
2017-06-13T16:22:59Z 2000 |
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| Type |
Article
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| Identifier |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 42.25.B, 77.84.B, 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/121170 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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