Photoinduced structural changes in As₁₀₀₋xSx layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoinduced structural changes in As₁₀₀₋xSx layers
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| Creator |
Stronski, A.
Vlcek, M. Sklenar, A. |
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| Description |
The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of refractive index n for variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀S₆₀ and, possibly, weak maximum at As₂₈.₆S₇₁.₄ composition. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Intensity dependence of the Raman bands corresponding to the As rich and S rich molecular fragments on exposure time is well described by the exponential decay, which correlates with exponential decay dependence of the etching rate of As₁₀₀₋xSx layers on exposure.
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| Date |
2017-06-13T15:36:26Z
2017-06-13T15:36:26Z 2000 |
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| Type |
Article
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| Identifier |
Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ.
1560-8034 PACS: 78.30L, 78.66.J, 81.05.Gc http://dspace.nbuv.gov.ua/handle/123456789/121137 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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