Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
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| Creator |
Shwarts, Yu.M.
Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
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| Description |
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level.
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| Date |
2017-06-13T16:09:43Z
2017-06-13T16:09:43Z 2000 |
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| Type |
Article
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| Identifier |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS: 07.07.D, 07.20.D, 61.72.T, 85.30 http://dspace.nbuv.gov.ua/handle/123456789/121164 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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