Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
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| Creator |
Dubovik, M.F.
Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
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| Description |
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented.
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| Date |
2017-06-13T15:37:13Z
2017-06-13T15:37:13Z 2000 |
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| Type |
Article
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| Identifier |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS: 78.40.-q; 78.55.-m; 78.70.En http://dspace.nbuv.gov.ua/handle/123456789/121140 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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