Silicon carbide LED
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Silicon carbide LED
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| Creator |
Vlaskina, S.I.
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| Description |
Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their operational characteristics. This in¬cludes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al⁺ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m² with passing current about 0.5 mA through area 50x50 mm and applied voltage about 2.6 ± 0.2 V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600 K.
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| Date |
2017-06-13T15:36:36Z
2017-06-13T15:36:36Z 2002 |
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| Type |
Article
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| Identifier |
Silicon carbide LED / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 71-75. — Бібліогр.: 2 назв. — англ.
1560-8034 PACS: 77.55.+f, 77.80. http://dspace.nbuv.gov.ua/handle/123456789/121138 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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