Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
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| Creator |
Bravina, S.L.
Cattan, E. Morozovsky, N.V. Remiens, D. |
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| Description |
The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems.
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| Date |
2017-06-13T15:20:29Z
2017-06-13T15:20:29Z 2002 |
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| Type |
Article
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| Identifier |
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 78.20.-e http://dspace.nbuv.gov.ua/handle/123456789/121122 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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