Photoluminescent films of nanocrystalline silicon doped with metals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoluminescent films of nanocrystalline silicon doped with metals
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| Creator |
Kaganovich, E.B.
Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. Venger, E.F. Bazylyuk, I.R. |
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| Description |
Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ablation when depositing them onto a silicon substrate. Measured are time-resolved photoluminescence e. It was ascertained that only Au could essentially increase intensity and stability of photoluminescence, increase its relaxation time by three orders of magnitude as well as decrease the density of states near the film-substrate boundary. It has been shown that the metal impurities provide an essential effect on photovoltage arising in films of nanocrystalline Si as well as the capture of non-equilibrium electrons by traps both in films themselves and at the substrate boundary.
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| Date |
2017-06-13T16:33:58Z
2017-06-13T16:33:58Z 2002 |
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| Type |
Article
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| Identifier |
Photoluminescent films of nanocrystalline silicon doped with metals / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov, E.F. Venger, I.R. Bazylyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 125-132. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS: 78.47.+p, 78.55.A, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/121181 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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