Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
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| Creator |
Semenova, G.N.
Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. |
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| Description |
Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer.
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| Date |
2017-06-13T16:35:17Z
2017-06-13T16:35:17Z 2002 |
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| Type |
Article
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| Identifier |
Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/121182 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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