Influence of ion implantation and annealing on composition and structure of GaAs surface
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of ion implantation and annealing on composition and structure of GaAs surface
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| Creator |
Normuradov, M.T.
Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
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| Description |
In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å.
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| Date |
2017-06-13T16:39:22Z
2017-06-13T16:39:22Z 2002 |
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| Type |
Article
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| Identifier |
Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 61.72.V, 61.80.-x, 79.60.-i http://dspace.nbuv.gov.ua/handle/123456789/121184 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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