Mechanism of 6H-3C transformation in SiC
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mechanism of 6H-3C transformation in SiC
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| Creator |
Vlaskina, S.I.
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| Description |
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.
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| Date |
2017-06-13T16:42:21Z
2017-06-13T16:42:21Z 2002 |
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| Type |
Article
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| Identifier |
Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS: 77.84.B http://dspace.nbuv.gov.ua/handle/123456789/121188 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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