Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures
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| Creator |
Savchyn, V.P.
Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. |
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| Description |
Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa₂O₃-pGaSe heterojunction.
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| Date |
2017-06-13T16:44:18Z
2017-06-13T16:44:18Z 2002 |
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| Type |
Article
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| Identifier |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures / V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 176-179. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS: 72.40, 74.40 http://dspace.nbuv.gov.ua/handle/123456789/121192 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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