Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
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| Creator |
Zymierska, D.
Auleytner, J. Dmitruk, N. |
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| Description |
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation.
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| Date |
2017-06-13T17:00:55Z
2017-06-13T17:00:55Z 2000 |
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| Type |
Article
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| Identifier |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 61.10.Kw, 61.16.Ch, 68.35.Bs, 78.20.Ci, S7.12 http://dspace.nbuv.gov.ua/handle/123456789/121224 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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