Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
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| Creator |
Konakova, R.V.
Milenin, V.V. Stovpovoi, M.A. |
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| Description |
The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.
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| Date |
2017-06-13T16:43:48Z
2017-06-13T16:43:48Z 2002 |
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| Type |
Article
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| Identifier |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 73.40.K, 73.40.C http://dspace.nbuv.gov.ua/handle/123456789/121191 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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