Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
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| Creator |
Boltovets, N.S.
Kashin, G.N. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. |
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| Description |
We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO₂ films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiOx-SiO₂ junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range.
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| Date |
2017-06-13T15:56:45Z
2017-06-13T15:56:45Z 2002 |
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| Type |
Article
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| Identifier |
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 68.65.A http://dspace.nbuv.gov.ua/handle/123456789/121160 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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