The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
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| Creator |
Baranskii, P.I.
Babich, V.M. Venger, E.F. Dotsenko, Yu.P. |
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| Description |
The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied.
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| Date |
2017-06-13T16:57:00Z
2017-06-13T16:57:00Z 2000 |
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| Type |
Article
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| Identifier |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS: 61.72.T, 72.20.M http://dspace.nbuv.gov.ua/handle/123456789/121218 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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