The influence of non-uniform deformation on photoelectric properties of crystalline silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon
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| Creator |
Vakulenko, O.V.
Kondratenko, S.V. |
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| Description |
Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient.
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| Date |
2017-06-13T16:50:41Z
2017-06-13T16:50:41Z 2000 |
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| Type |
Article
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| Identifier |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 72.40. http://dspace.nbuv.gov.ua/handle/123456789/121205 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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