Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence
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| Creator |
Valakh, M.Ya.
Sadofyev, Yu.G. Korsunska, N.O. Semenova, G.N. Strelchuk, V.V. Borkovska, L.V. Vuychik, M.V. Sharibaev, M. |
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| Description |
CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (inside ZnSe barrier and cap layers, Zn₁-xCdxSe wetting layer and at quantum dot heterointerface) and their localization depends on the preparation regimes and parameters of investigated structures. It is shown that defect level follows the heavy-hole related level. An intense anti-Stokes photoluminescence of quantum dots has been found. Two-step excitation mechanism of the anti-Stokes photoluminescence through the local states of investigated defects localized on the quantum dot interface is proposed.
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| Date |
2017-06-13T17:29:40Z
2017-06-13T17:29:40Z 2002 |
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| Type |
Article
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| Identifier |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence / M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 254-257. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS: 78.55.Et, 78.67.Hc, 71.55.Gs http://dspace.nbuv.gov.ua/handle/123456789/121242 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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