Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
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| Creator |
Seitmuratov, M.S.
Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
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| Description |
Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments.
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| Date |
2017-06-13T17:30:10Z
2017-06-13T17:30:10Z 2002 |
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| Type |
Article
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| Identifier |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS: 61.66, 61.80 http://dspace.nbuv.gov.ua/handle/123456789/121243 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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