Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
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| Creator |
Tagiyev, B.G.
Madatov, R.S. Aydayev, F.Sh. Abbasova, T.M. |
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| Description |
The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained.
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| Date |
2017-06-13T17:14:12Z
2017-06-13T17:14:12Z 2002 |
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| Type |
Article
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| Identifier |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS: 72.80.-r, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/121236 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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