Metal-dielectric black matrix for display devices
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Metal-dielectric black matrix for display devices
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| Creator |
Chang Won Park
Joon-Bae Lee Young Rag Do Shepeliavyi, P. Michailovska, K. Indutnyy, I. Kudryavtsev, O. |
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| Description |
Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiOx-Cr. It is shown that the coating prepared in this way is achromatic and has low reflectivity (~1%) from the side of a transparent panel. The index of diffuse light scattering measured for such metal-dielectric coating does not exceed 0.1% in the spectral range of 400-700 nm. It is shown that black matrix based on the coating SiOx-Cr can be produced using the methods of direct or lift-off photolithography, with organic or non-organic photoresist. Color CRT with these metal-dielectric black matrixes on their panels have increased image contrast as compared with the colloid-graphite ones.
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| Date |
2017-06-13T17:01:45Z
2017-06-13T17:01:45Z 2000 |
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| Type |
Article
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| Identifier |
Metal-dielectric black matrix for display devices / Chang Won Park, Joon-Bae Lee, Young Rag Do, P. Shepeliavyi, K. Michailovs'ka, I. Indutnyy, O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 496-499. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 42.79.K, 85.40.H http://dspace.nbuv.gov.ua/handle/123456789/121226 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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