Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix
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| Creator |
Azhniuk, Yu.M.
Gomonnai, A.V. Gomonnai, O.O. Hasynets, S.M. Kováč, F. Lopushansky, V.V. Petryshynets, I. Rubish, V.M. Zahn, D.R.T. |
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| Description |
Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).
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| Date |
2017-06-13T16:50:47Z
2017-06-13T16:50:47Z 2015 |
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| Type |
Article
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| Identifier |
Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.03.248 PACS 64.70.pn, 78.67.-n, 82.80.Gk http://dspace.nbuv.gov.ua/handle/123456789/121206 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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