Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
|
|
| Creator |
Myroniuk, D.V.
Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. |
|
| Description |
Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.
|
|
| Date |
2017-06-13T16:58:47Z
2017-06-13T16:58:47Z 2015 |
|
| Type |
Article
|
|
| Identifier |
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.03.286 PACS 61.05.cp, 61.80.-x, 77.55.hf, 81.15.Cd http://dspace.nbuv.gov.ua/handle/123456789/121221 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|