Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
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| Creator |
Konoreva, O.V.
Lytovchenko, M.V. Malyi, Ye.V. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. Shlapatska, V.V. |
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| Description |
The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage characteristics and its mechanism in accord with the model by K. Maeda. Made in this work was the analysis of changes in the concentration of deep recombination levels caused be irradiation. The coefficient of radiation damages of charge carrier lifetime in GaP was estimated (kτ = 1.5·10⁷7 s·cm⁻²). It was discovered that the luminescence intensity recovering after isochronous annealing possesses two stages. Heating the diodes up to T > 350 °C leads to destruction of p-region in the diode and deterioration of lens optical transmission.
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| Date |
2017-06-13T16:50:05Z
2017-06-13T16:50:05Z 2015 |
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| Type |
Article
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| Identifier |
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk, V.V. Shlapatska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 312-316. — Бібліогр.: 11 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.03.312 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/121204 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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