Ohmic contacts based on Pd to indium phosphide Gunn diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ohmic contacts based on Pd to indium phosphide Gunn diodes
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Bobyl, A.V. Zorenko, A.V. Arsentiev, I.N. Kladko, V.P. Kovtonyuk, V.M. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
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| Description |
Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.
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| Date |
2017-06-13T16:51:23Z
2017-06-13T16:51:23Z 2015 |
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| Type |
Article
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| Identifier |
Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.03.317 PACS 73.40.Cg, 73.40.Ns, 85.30.Fg http://dspace.nbuv.gov.ua/handle/123456789/121208 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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