Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
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| Creator |
Belyaev, A.E.
Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
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| Description |
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻².
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| Date |
2017-06-13T18:09:09Z
2017-06-13T18:09:09Z 2015 |
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| Type |
Article
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| Identifier |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.04.391 PACS 73.40.Ns http://dspace.nbuv.gov.ua/handle/123456789/121259 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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