Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
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| Creator |
Naumov, A.V.
Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
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| Description |
The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.
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| Date |
2017-06-13T18:04:31Z
2017-06-13T18:04:31Z 2015 |
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| Type |
Article
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| Identifier |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk,
M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.04.396 PACS 65.80.-g, 73.40.Kp, 78.30.Fs, 78.55.Cr, 85.30.-z http://dspace.nbuv.gov.ua/handle/123456789/121254 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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