External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
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| Creator |
Vlaskina, S.I.
Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
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| Description |
Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too.
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| Date |
2017-06-13T18:58:56Z
2017-06-13T18:58:56Z 2015 |
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| Type |
Article
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| Identifier |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.04.448 PACS 64.70.K-, 77.84.Bw, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/121273 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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