Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
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| Creator |
Okhrimenko, O.B
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| Description |
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film
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| Date |
2017-06-13T18:59:27Z
2017-06-13T18:59:27Z 2015 |
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| Type |
Article
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| Identifier |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.04.452 PACS 61.72.Ff, 68.35.-p, 78.70.Gq http://dspace.nbuv.gov.ua/handle/123456789/121274 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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