Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
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| Creator |
Kostylyov, V.P.
Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
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| Description |
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.
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| Date |
2017-06-13T19:01:02Z
2017-06-13T19:01:02Z 2015 |
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| Type |
Article
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| Identifier |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ.
1560-8034 DOI: 10.15407/spqeo18.04.464 PACS 72.20.Jv, 73.50.Gr, 78.67.-n, 88.40.jj http://dspace.nbuv.gov.ua/handle/123456789/121277 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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