Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂
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Creator |
Mamalui, A.A.
Andreeva, O.N. Sinelnik, A.V. |
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Subject |
Characterization and properties
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Description |
The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrations corresponding to the beginning of the phase transition 2H-NbSe₂ -> 4H-NbSe₂ the disappearance of carrier group occurs, that is an electronic topological transition of order 2.5 takes place.
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Date |
2017-06-14T04:33:23Z
2017-06-14T04:33:23Z 2016 |
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Type |
Article
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Identifier |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ / A.A.Mamalui, O.N.Andreeva, A.V.Sinelnik // Functional Materials. — 2016. — Т. 23, № 3. — С. 357-363. — Бібліогр.: 24 назв. — англ.
1027-5495 DOI: dx.doi.org/10.15407/fm23.03.357 http://dspace.nbuv.gov.ua/handle/123456789/121304 |
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Language |
en
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Relation |
Functional Materials
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Publisher |
НТК «Інститут монокристалів» НАН України
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