High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix
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| Creator |
Strelchuk, V.V.
Valakh, M.Ya. Vuychik, M.V. Ivanov, S.V. Kop'ev, P.S. Shubina, T.V. |
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| Description |
The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties.
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| Date |
2017-06-14T07:37:47Z
2017-06-14T07:37:47Z 2002 |
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| Type |
Article
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| Identifier |
High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 78.55.Et, 78.66.Hf, 68.66.Hb http://dspace.nbuv.gov.ua/handle/123456789/121339 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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