Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
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Creator |
Freik, D.M.
Nykyruy, L.I. Shperun, V.M. |
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Description |
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.
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Date |
2017-06-14T07:58:56Z
2017-06-14T07:58:56Z 2002 |
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Type |
Article
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Identifier |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ.
1560-8034 PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp. http://dspace.nbuv.gov.ua/handle/123456789/121369 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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