Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses
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Creator |
Malesh, V.I.
Rubish, V.V. Shpak, I.I. Rubish, V.M. Puha, P.P. |
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Description |
The results of investigating different parameters (of glasses in Ge-Sb-Se system have been given. The values of structural-sensitive molar IR polarization F have been calculated and its concentrational dependence has been constructed. The polarity of chemical bonds has been estimated. It has been shown that with increasing the content of Sb₂Se₃ in the composition of the glasses the polarity of Sb-Se bonds rises. Within the limits of free volume conception the formation energy (Eh) and the volume (Vh) of microcavities have been calculated. Eh and Vh are structural-sensitive parameters of glassy materials. It has been shown that the inflection is observed in concentrational dependences of investigated and calculated parameters of (GeSe₂)x(Sb₂Se₃)₁-x glasses in the vicinity of x = 0.60. It testifies to the structural changes in the glasses while changing the composition. The structure of (GeSe₂)x(Sb₂Se₃)₁-x glasses is mainly determined by structural units GeSe₄/₂ and SbSe₃/₂, to be statistically distributed into matrices. The increase of Sb₂Se₃ content in GeSe₂ is accompanied by a gradual transition from tetrahedrally co-ordinated structural units in glassy GeSe₂, to trigonally co-ordinated - in Sb₂Se₃. |
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Date |
2017-06-14T07:44:05Z
2017-06-14T07:44:05Z 2002 |
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Type |
Article
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Identifier |
Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses / V.I. Malesh, V.V. Rubish, I.I. Shpak, V.M. Rubish, P.P. Puha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 385-390. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS: 73.61.Jc, 77.22.-d http://dspace.nbuv.gov.ua/handle/123456789/121346 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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