Photoelectric properties of metal-porous silicon-silicon planar heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures
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| Creator |
Brodovoi, A.V.
Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
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| Description |
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes.
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| Date |
2017-06-14T07:35:56Z
2017-06-14T07:35:56Z 2002 |
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| Type |
Article
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| Identifier |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 79.60.Jv http://dspace.nbuv.gov.ua/handle/123456789/121336 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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